Description
The ALD212908A/ALD212908 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.
Features
- precision threshold voltage, which enables circuit designs with input/output signals referenced to enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 1.0V supply voltage has been successfully built with these devices. ALD212908A EPAD MOSFETs feature exceptional matched pair electrical characteristics of Gate Thresh.