ALD212908A Datasheet | Advanced Linear Devices

ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB ALD212908A/ALD212908 PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR VGS(th)= +0.08V GENERAL DESCRIPTION The ALD212908A/ALD212908 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD212908A/ALD212908 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD212908A/ ALD212908 Features precision threshold voltage, which enables circuit designs with input/output signals referenced to enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 1.0V supply voltage has been successfully built with these devices. ALD212908A EPAD MOSFETs feature exceptional matched pair electrical characteristics of Gate Threshold Voltage VGS(th) set precisely at +0.80V +0.01V, IDS = +20µA @ VDS = 0.1V, with a typical offset voltage of only +0.001V (1m V). Built on a single monolithic chip, they also exhibit excellent temperature tracking characteristics. These precision devices are versatile as design ponents for a broad range of analog small signal applications such as basic building blocks for current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. They also excel in limited operating voltage applications, such as very low level voltage-clamps and nano-power normally-on circuits. In addition to precision matched-pair electrical characteristics, each individual EPAD MOSFET also exhibits well controlled manufacturing characteristics, enabling the user to depend on tight design limits...