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ALD212908A - PRECISION N-CHANNEL MOSFET ARRAY

General Description

The ALD212908A/ALD212908 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.

Key Features

  • precision threshold voltage, which enables circuit designs with input/output signals referenced to enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 1.0V supply voltage has been successfully built with these devices. ALD212908A EPAD MOSFETs feature exceptional matched pair electrical characteristics of Gate Thresh.

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Datasheet Details

Part number ALD212908A
Manufacturer Advanced Linear Devices
File Size 511.72 KB
Description PRECISION N-CHANNEL MOSFET ARRAY
Datasheet download datasheet ALD212908A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD212908A/ALD212908 PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR VGS(th)= +0.08V GENERAL DESCRIPTION The ALD212908A/ALD212908 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD212908A/ALD212908 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD212908A/ ALD212908 features precision threshold voltage, which enables circuit designs with input/output signals referenced to enhanced operating voltage ranges.