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ALD212904 - MOSFET

General Description

The ALD212904 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology.

Key Features

  • precision +0.40V threshold voltage, which enables circuit designs with input/output signals referenced to very low operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been succ.

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Datasheet Details

Part number ALD212904
Manufacturer Advanced Linear Devices
File Size 106.38 KB
Description MOSFET
Datasheet download datasheet ALD212904 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD212904 VGS(th)= +0.40V GENERAL DESCRIPTION The ALD212904 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These dual monolithic devices are enhanced additions to the ALD110904 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD212904 features precision +0.40V threshold voltage, which enables circuit designs with input/output signals referenced to very low operating voltage ranges.