AP01L60H-A-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp

General Description

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP01L60J) is available for low-profile applications.

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AP01L60H-A-HF n-channel enhancement mode power mosfet by Advanced Power Electronics Corp - Datasheet Preview

Datasheet Details

Part number	AP01L60H-A-HF
Manufacturer	Advanced Power Electronics Corp
File Size	59.15 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP01L60H-A-HF Datasheet

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Other Datasheets by Advanced Power Electronics Corp

Part Number	Description
AP01L60H-H	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60H-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60H	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60AT	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60J	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP01L60H/J-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 12Ω 1A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 650 +30 1 0.8 3 29 0.