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AP01L60J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP01L60J, a member of the AP01L60H N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP01L60J) is available for low-profile applications.

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Datasheet preview – AP01L60J

Datasheet Details

Part number AP01L60J
Manufacturer Advanced Power Electronics
File Size 75.89 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP01L60J Datasheet
Additional preview pages of the AP01L60J datasheet.

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Full PDF Text Transcription

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AP01L60H/J Pb Free Plating Product Advanced Power Electronics Corp. ϰʳRepetitive Avalanche Rated ϰʳFast Switching Speed ϰʳSimple Drive Requirement ϰ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12Ө 1A Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25к ID@TC=100к IDM PD@TC=25к EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ±30 1 0.8 3 29 0.
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