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AP01L60H-H Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP01L60H/J-H RoHS-pliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement D G.

General Description

The TO-252 package is universally preferred for all mercial-industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP01L60J) is available for low-profile applications.

BVDSS RDS(ON) ID 700V 12Ω 1A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range G DS TO-251(J) Rating 700 +30 1 0.8 3 29 0.232 0.5 -55 to 150 -55 to 150 Units V V A A A W W/℃ mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 4.3 62.5 110 Units ℃/W ℃/W ℃/W Data & specifications subject to change without notice 1 201305283 AP01L60H/J-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

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