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AP01L60H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.

The through-hole version (AP01L60J) is available for low-profile applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP01L60H-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60H-H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP01L60H/J Pb Free Plating Product Advanced Power Electronics Corp. ϰʳRepetitive Avalanche Rated ϰʳFast Switching Speed ϰʳSimple Drive Requirement ϰ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12Ө 1A Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25к ID@TC=100к IDM PD@TC=25к EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ±30 1 0.8 3 29 0.