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AP02N40I-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.

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Datasheet Details

Part number AP02N40I-HF
Manufacturer Advanced Power Electronics
File Size 89.87 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP02N40I-HF Datasheet
Additional preview pages of the AP02N40I-HF datasheet.

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AP02N40I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 5Ω 1.6A S Description AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.6 1 3 27.
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