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AP02N40P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial applications.

The good thermal performance and low package cost, Contribute to its wide industry application.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP02N40H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N40H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N40H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP02N40J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP02N40P RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 5Ω 1.6A S Description AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial applications. The good thermal performance and low package cost, Contribute to its wide industry application. G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.