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AP02N40J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.

The TO-251 package is widely preferred for commercial-industrial through-hole applications.

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Datasheet Details

Part number AP02N40J
Manufacturer Advanced Power Electronics
File Size 174.14 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP02N40J Datasheet
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Full PDF Text Transcription

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AP02N40J RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 5Ω 1.6A S Description AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness. The TO-251 package is widely preferred for commercial-industrial through-hole applications. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.
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