Datasheet Details
| Part number | AP20G45EH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 69.78 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP20G45EH-AdvancedPowerElectronics.pdf |
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Overview: AP20G45EH/J Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR.
| Part number | AP20G45EH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 69.78 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP20G45EH-AdvancedPowerElectronics.pdf |
|
|
|
* High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications G C E TO-252(H) G C E TO-251(J) VCES ICP G Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IGEP Pulsed Gate-Emitter Voltage ICP PD@TC=25℃ Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 450 ±6 ±8 130 20 -55 to 150 -55 to 150 450V 130A C E Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
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