AP20G45EH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
High Input Impedance
High Pick Current Capability
4.5V Gate Drive
Strobe Flash Applications
G
C E TO-252(H)
G C E
TO-251(J)
VCES ICP
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGE Gate-Emitter Voltage
IGEP Pulsed Gate-Emitter Voltage
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AP20G45EH/J
Advanced Power Electronics Corp.
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Description
* High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications
G
C E TO-252(H)
G C E
TO-251(J)
VCES ICP
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGE Gate-Emitter Voltage
IGEP Pulsed Gate-Emitter Voltage
ICP PD@TC=25℃
Pulsed Collector Current Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating 450 ±6 ±8 130 20
-55 to 150 -55 to 150
450V 130A
C
E
Units V V V A W ℃ ℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
AP20G45EH Datasheet
