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AP20GT60ASI-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ. =1.7V@IC=12A ▼ RoHS Compliant Product GC E TO-220CFM(I) VCES IC G 600V 12A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=100oC IFM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperatur.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP20GT60ASP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60I N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60P-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60SW N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60W N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP20GT60ASI-HF RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.7V@IC=12A ▼ RoHS Compliant Product GC E TO-220CFM(I) VCES IC G 600V 12A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=100oC IFM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Notes: 1.Pulse width limited by Max. junction temperature .