Datasheet4U Logo Datasheet4U.com

AP20GT60I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ. =1.8V@IC=20A ▼ RoHS Compliant Product AP20GT60I RoHS-compliant Product N-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET APM
AP20G02CDF 20V N+P-Channel Enhancement Mode MOSFET APM
AP20G02DF 20V N+P-Channel Enhancement Mode MOSFET APM
AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET APM
AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET APM

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP20GT60ASI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60ASP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60P-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60SW N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60W N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A ▼ RoHS Compliant Product AP20GT60I RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR GC E TO-220CFM(I) VCES IC G 600V 20A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 600 +20 40 20 160 25 -55 to 150 150 E Units V V A A A W ℃ ℃ Notes: 1.Pulse width limited by Max. junction temperature .