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AP20GT60SW - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =1.8V@IC=20A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free G C E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IDM PD@TC=25℃ TSTG TJ TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Collector to Emitter Diode Forward Current 1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP20GT60SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free G C E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IDM PD@TC=25℃ TSTG TJ TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Collector to Emitter Diode Forward Current 1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .