Datasheet4U Logo Datasheet4U.com

AP20GT60W - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ. =1.8V@IC=20A ▼ RoHS Compliant & Halogen-Free G C E C VCES IC TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 600 VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation +20 40 20 160 125 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET APM
AP20G02CDF 20V N+P-Channel Enhancement Mode MOSFET APM
AP20G02DF 20V N+P-Channel Enhancement Mode MOSFET APM
AP20G03BDF 30V N+P-Channel Enhancement Mode MOSFET APM
AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET APM

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP20GT60ASI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60ASP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60I N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60P-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60SW N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP20GT60W Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A ▼ RoHS Compliant & Halogen-Free G C E C VCES IC TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 600 VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Maximum Power Dissipation +20 40 20 160 125 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 600V 20A C E Units V V A A A W ℃ ℃ Notes: 1.Pulse width limited by Max. junction temperature . .