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AP20G45EJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP20G45EJ datasheet PDF. This datasheet also covers the AP20G45EH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

High Input Impedance High Pick Current Capability 4.5V Gate Drive Strobe Flash Applications G C E TO-252(H) G C E TO-251(J) VCES ICP G Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IGEP Pulsed Gate-Emitter Voltage

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP20G45EH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP20G45EH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60ASI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60ASP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60I N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP20GT60P-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP20G45EH/J Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Description * High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications G C E TO-252(H) G C E TO-251(J) VCES ICP G Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IGEP Pulsed Gate-Emitter Voltage ICP PD@TC=25℃ Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 450 ±6 ±8 130 20 -55 to 150 -55 to 150 450V 130A C E Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max.