AP2530AGY-HF- N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2530GY- N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2530GY-HF- N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2531GY- N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2531GY-HF- N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2532GY- N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2533GY-HF- N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP25G45EM
Advanced Power Electronics Corp.
▼ High Input Impedance ▼ High Pick Current Capability ▼ 4.5V Gate Drive ▼ S trobe Flash Applications
C C C C
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
VCE ICP
450V 150A C
G E
G E
SO-8
E E
Absolute Maximum Ratings
Symbol VCE VGE VGEP ICP PD@TC=25℃ TSTG TJ
1
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range
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Rating 450 ±6 ±8 150 2.