AP25G45GEM Description
AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp. 6 64.5 7 30 11.5 24.5 150 3.3 2227 200 79 - Max. 1.Surface mounted on 1 in2 copper pad of FR4 board.
AP25G45GEM is N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR manufactured by Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
| AP25G45EM | N-CHANNEL INSULATED GATE |
| AP2530AGY-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2530GY | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2530GY-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2531GY | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp. 6 64.5 7 30 11.5 24.5 150 3.3 2227 200 79 - Max. 1.Surface mounted on 1 in2 copper pad of FR4 board.