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AP25G45GEM - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Part number AP25G45GEM
Manufacturer Advanced Power Electronics
File Size 127.39 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription

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AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Pick Current Capability ▼ 4.5V Gate Drive ▼ Strobe Flash Applications C C C C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCE ICP 450V 150A C G E G E SO-8 E E Absolute Maximum Ratings Symbol VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range www.DataSheet.net/ Rating 450 ±6 ±8 150 2.
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