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AP2611GYT-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink.

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Other Datasheets by Advanced Power Electronics Corp

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AP2611GY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2610GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP2613GYT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP2611GYT-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free D G Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink. BVDSS RDS(ON) ID -20V 9mΩ -15.4A D D D D S S S G PMPAK® 3x3 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.