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AP2613GYT-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink.

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Datasheet Details

Part number AP2613GYT-HF
Manufacturer Advanced Power Electronics
File Size 55.53 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP2613GYT-HF Datasheet
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Advanced Power Electronics Corp. AP2613GYT-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free D G Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink. BVDSS RDS(ON) ID -20V 9mΩ -15.4A D D D D S S S G PMPAK® 3x3 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.
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