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AP2612GY-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The S0T-26 package is widely used for commercial-industrial surface mount applications.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP2610GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2611GY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2611GYT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2613GY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2613GYT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP2612GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Device ▼ RoHS Compliant D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) G D 30V 35mΩ 6A ID SOT-26 D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial surface mount applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +8 6 4.