Datasheet4U Logo Datasheet4U.com

AP2613GY-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

AP2613 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP2602 Octave Remote Resistor-programmable Temperature Switches BCD Semiconductor
AP2603Y P CHANNEL ENHANCEMENT MODE POWER MOSFET ETC
AP2605Y P CHANNEL ENHANCEMENT MODE POWER MOSFET ETC
AP260N15MP 150V N-Channel Enhancement Mode MOSFET APM
AP2623 P-Channel Enhancement-Mode MOSFETs SMD HAOHAI

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP2613GYT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2610GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2611GY-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2611GYT-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2612GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP2613GY-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package ▼ RoHS Compliant & Halogen-Free G D S Description AP2613 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercial-industrial applications. BVDSS RDS(ON) ID3 -20V 37mΩ - 6.2A S D D SOT-26 G D D Absolute Maximum Ratings@Tj=25oC.