AP30G40AEO Overview
Advanced Power Electronics Corp. @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Units +30 uA 10 uA 6V 1.2 V 91.2 nC - nC - nC - ns - us - ns - us - pF - pF - pF 125 oC/W Notes:.
| Part number | AP30G40AEO |
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| Datasheet | AP30G40AEO-AdvancedPowerElectronics.pdf |
| File Size | 57.14 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics Corp. @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Units +30 uA 10 uA 6V 1.2 V 91.2 nC - nC - nC - ns - us - ns - us - pF - pF - pF 125 oC/W Notes:.
See all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP30G40GEO-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30N30W | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30N30WI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |