AP30G40AEO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp

Datasheet Details

Part number	AP30G40AEO
Manufacturer	Advanced Power Electronics Corp
File Size	57.14 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP30G40AEO Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AP30G04NF	40V N+P-Channel Enhancement Mode MOSFET	APM
AP30G10GD	100V N+P-Channel Enhancement Mode MOSFET	APM
AP3000	1/4 INCH DIAPHRAGM VALVE	APTech
AP3000A-00	SILICON PIN DIODE CHIP	ASI
AP3000C-11	SILICON PIN DIODE	ASI

Other Datasheets by Advanced Power Electronics Corp

Part Number	Description
AP30G40GEO-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G100W	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120ASW	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120ASW-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G120BSW-HF	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Advanced Power Electronics Corp. AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.3V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 130A C E Absolute Maximum Ratings Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage +6 ICP PD@TA=25oC1 Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation 130 1 TSTG Storage Temperature Range -55 to 150 TJ Junction Temperature Range -55 to 150 . Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.