AP30G40GEO-HF Overview
Advanced Power Electronics Corp. +30 10 9 1.2 96 125 Units uA uA V V nC nC nC ns ns ns ns pF pF pF oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
| Part number | AP30G40GEO-HF |
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| Datasheet | AP30G40GEO-HF-AdvancedPowerElectronics.pdf |
| File Size | 50.68 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics Corp. +30 10 9 1.2 96 125 Units uA uA V V nC nC nC ns ns ns ns pF pF pF oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
See all Advanced Power Electronics Corp datasheets
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|---|---|
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| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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| AP30N30WI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |