AP3N020P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP436N00420sesreierisesaarerefrforommAAddvvaanncceedd PPoowweerr iinnnnoovvaatteedd design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

Advanced Power Electronics

📥 Download Datasheet

Datasheet Details

Part number	AP3N020P
Manufacturer	Advanced Power Electronics
File Size	202.88 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP3N020P Datasheet
Additional preview pages of the AP3N020P datasheet.

📁 Similar Datasheet

AP3000 - 1/4 INCH DIAPHRAGM VALVE (APTech)
AP3000A-00 - SILICON PIN DIODE CHIP (ASI)
AP3000C-11 - SILICON PIN DIODE (ASI)
AP3001 - PWM BUCK DC-DC CONVERTER (BCD Semiconductor)
AP3002 - 1/4 INCH DIAPHRAGM VALVE (APTech)
AP3003 - BUCK DC-DC CONVERTER (BCD Semiconductor)
AP3005 - 2A 420kHz PWM BUCK DC-DC CONVERTER (BCD Semiconductor)
AP3008 - WHITE LED DRIVER (BCD Semiconductor)
AP3009 - WHITE LED STEP-UP CONVERTER (BCD Semiconductor)
AP300A-00 - SILICON PIN DIODE CHIP (ASI)

Other Datasheets by Advanced Power Electronics

AP3N2R8AMT - N-CHANNEL MOSFET WITH SCHOTTKY DIODE
AP30G100W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120ASW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120ASW-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G120BSW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120CSW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120SW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text

Advanced Power Electronics Corp. AP3N020P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP436N00420sesreierisesaarerefrforommAAddvvaanncceedd PPoowweerr iinnnnoovvaatteedd design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID 30V 20mΩ 23.

Published: Mar 21, 2020 |