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AP3N2R8AMT - N-CHANNEL MOSFET WITH SCHOTTKY DIODE

Datasheet Summary

Description

AP3N2R8A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP3N2R8AMT
Manufacturer Advanced Power Electronics
File Size 67.43 KB
Description N-CHANNEL MOSFET WITH SCHOTTKY DIODE
Datasheet download datasheet AP3N2R8AMT Datasheet
Additional preview pages of the AP3N2R8AMT datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP3N2R8AMT Halogen-Free Product N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Ultra Low On-resistance ▼ RoHS Compliant & Halogen-Free G S Description AP3N2R8A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) 30V 2.8mΩ D D D D S S S G PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol .
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