Datasheet Details
| Part number | AP3N2R8AMT |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 67.43 KB |
| Description | N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
| Datasheet | AP3N2R8AMT-AdvancedPowerElectronics.pdf |
|
|
Overview: Advanced Power Electronics Corp. AP3N2R8AMT Halogen-Free Product N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Ultra Low On-resistance ▼ RoHS pliant & Halogen-Free G.
| Part number | AP3N2R8AMT |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 67.43 KB |
| Description | N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
| Datasheet | AP3N2R8AMT-AdvancedPowerElectronics.pdf |
|
|
|
AP3N2R8A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.
| Part Number | Description |
|---|---|
| AP3N020P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G40AEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G40GEO-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |