AP3N2R8AMT datasheet by Advanced Power Electronics Corp.
| Part number | AP3N2R8AMT |
|---|---|
| Datasheet | AP3N2R8AMT-AdvancedPowerElectronics.pdf |
| File Size | 67.43 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL MOSFET WITH SCHOTTKY DIODE |
|
|
AP3N2R8A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP3N020P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G40AEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G40GEO-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
