AP3P020J
AP3P020J is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
AP3P020 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The straight lead version TO-251 package is widely preferred for all mercial-industrial through hole applications.
BVDSS RDS(ON) ID
-30V 20mΩ -30A
G DS
TO-251(J)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range
-30
+20
-30
-18.5
-100
28.8 m J
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 5
Units ℃/W...
