Datasheet Details
| Part number | AP3P080N |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 105.76 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP3P080N Download (PDF) |
|
|
|
Overview: Advanced Power Electronics Corp. AP3P080N Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.
| Part number | AP3P080N |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 105.76 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP3P080N Download (PDF) |
|
|
|
AP3P080 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
| Part Number | Description |
|---|---|
| AP3P020J | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3P052EN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3P052EY | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3P055N | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3P7R0EM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |