AP3P052EY
AP3P052EY is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
AP3P052 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for all mercial-industrial applications.
BVDSS RDS(ON) ID
-30V 52mΩ
- 5.1A
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
- 30
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
+20
-5.1
-4.1
-20
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-amb
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 62.5
Unit ℃/W
1...
