Datasheet4U Logo Datasheet4U.com

AP3P052EY - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP3P052 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – AP3P052EY

Datasheet Details

Part number AP3P052EY
Manufacturer Advanced Power Electronics
File Size 63.54 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP3P052EY Datasheet
Additional preview pages of the AP3P052EY datasheet.

📁 Similar Datasheet

  • AP3000 - 1/4 INCH DIAPHRAGM VALVE (APTech)
  • AP3000A-00 - SILICON PIN DIODE CHIP (ASI)
  • AP3000C-11 - SILICON PIN DIODE (ASI)
  • AP3001 - PWM BUCK DC-DC CONVERTER (BCD Semiconductor)
  • AP3002 - 1/4 INCH DIAPHRAGM VALVE (APTech)
  • AP3003 - BUCK DC-DC CONVERTER (BCD Semiconductor)
  • AP3005 - 2A 420kHz PWM BUCK DC-DC CONVERTER (BCD Semiconductor)
  • AP3008 - WHITE LED DRIVER (BCD Semiconductor)
  • AP3009 - WHITE LED STEP-UP CONVERTER (BCD Semiconductor)
  • AP300A-00 - SILICON PIN DIODE CHIP (ASI)
Other Datasheets by Advanced Power Electronics
  • AP3P052EN - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP3P055N - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP3P020J - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP3P080N - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP3P7R0EM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP30G100W - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP30G120ASW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP30G120ASW-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP3P052EY Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free S D D SOT-26 G DD Description AP3P052 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercial-industrial applications. BVDSS RDS(ON) ID G -30V 52mΩ - 5.1A D S Absolute Maximum Ratings@Tj=25o.
Published: |