AP3P055N
AP3P055N is P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
AP3P055 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS
RDS(ON) ID3
-30V 55mΩ -3.9A
The SOT-23S package is widely preferred for mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
Drain-Source Voltage
- 30
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
+20
-3.9
-3.1
-16
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 100
Unit ℃/W
1 202007161
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol...
