AP4228GM-HF-3
AP4228GM-HF-3 is Dual N-channel Enhancement-mode Power MOSFET manufactured by Advanced Power Electronics Corp.
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The AP4228GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications.
G2
S1
D2 D2 D1 D1
SO-8
S2 G2 S2 G1 S1
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Rating 30 ±20 6.8 5.5 40 2 0.016
-55 to 150 -55 to 150
Value 62.5
Units V V A A A W
W/°C °C °C
Unit °C/W
Ordering Information
AP4228GM-HF-3TR Ro HS-pliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel
©2010 Advanced Power Electronics Corp. USA .a-powerusa.
200809183-3 1/5
Advanced Power Electronics Corp.
Electrical Characteristics at Tj = 25°C (unless otherwise specified)
Symbol BVDSS
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250u A
Min. Typ. Max. Units
- -
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate...
