AP4228GM Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 201016031 AP4228GM @T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 0.03 15 9 2 6 10...