AP4228M Datasheet | Advanced Power Electronics Corp

Description .. The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. G1 S1 D1 G2 D2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating 30 ± 20 6.8 5.5 40 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice Electrical Characteristics@T j=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250u A Min. 30 1 - Typ. 0.03 15 9 2 6 10 9 18 6 580 150 108 Max. Units 26 40 3 1 25 ±100 15 930 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250u A VDS=10V, ID=6A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) o o VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ± 20V ID=6.8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz .. Drain-Source Leakage Current (Tj=70 C) Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Symbol VSD Parameter Forward On...