AP4513GD Overview
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 5.8 4.7 20 2 0.016 4 Units -35 ±20 -4.3 -3.4 -20 V V A A A W W/ ℃ 12.5 -5 0.05 mJ A mJ ℃ ℃ P-channel Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 1 12.5 5 0.05 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Parameter 3 Value Max.
