AP4513GD datasheet by Advanced Power Electronics Corp.
| Part number | AP4513GD |
|---|---|
| Datasheet | AP4513GD_AdvancedPowerElectronics.pdf |
| File Size | 118.95 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 200615051-1/7 .. AP4513GD N-CH @Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
View all Advanced Power Electronics Corp datasheets
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