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AP4513GH
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance
S1 G1 S2 G2 D1/D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID
35V 42mΩ 10A -35V 75mΩ -8A
TO-252-4L
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 35 ±20 10 6 50 7.8 0.