| Part number | AP9922EO |
|---|---|
| Datasheet | AP9922EO_AdvancedPowerElectronics.pdf |
| File Size | 127.15 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 125 Unit ℃/W Data and specifications subject to change without notice 200615052 AP9922EO @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) .. Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
See all Advanced Power Electronics Corp datasheets
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