AP9928GEO datasheet by Advanced Power Electronics Corp.
| Part number | AP9928GEO |
|---|---|
| Datasheet | AP9928GEO_AdvancedPowerElectronics.pdf |
| File Size | 105.96 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 125 Unit ℃/W Data and specifications subject to change without notice 200206031 AP9928GEO @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 0.02 21 15.9...
View all Advanced Power Electronics Corp datasheets
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|---|---|
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