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AP9965GEJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9965GEJ, a member of the AP9965GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9965GEJ
Manufacturer Advanced Power Electronics
File Size 138.85 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9965GEJ Datasheet
Additional preview pages of the AP9965GEJ datasheet.

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Full PDF Text Transcription

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AP9965GEH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 40V 28mΩ 27A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9965GEJ) are available for low-profile applications.
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