Datasheet Details
| Part number | AP9965GYT-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.35 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP9965GYT-HF Datasheet
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| Part number | AP9965GYT-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.35 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP9965GYT-HF Datasheet
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The PMPAK ® 3 x 3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink.
S S S D D D G PMPAK ® 3 x 3 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 +16 10 8 40 3.57 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Continuous Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 5 35 Unit ℃/W ℃/W 1 201112231 Data and specifications subject to change without notice AP9965GYT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=9A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=32V, VGS=0V VGS=+16V, VDS=0V ID=9A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz f=1.0MHz Min.
AP9965GYT-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part Number | Description |
|---|---|
| AP9965GYT-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9965GEJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960AGM-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GD | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GM-HF | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |