Advanced Power Technology 2N2857
The 2N2857 is a silicon NPN transistor, designed for UHF equipment.| Part No. | 2N2857 |
|---|---|
| Datasheet | 2N2857 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
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● Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72
DESCRIPTION
:APPLICATIONS
include low noise amplifier; oscillator, and mixer applications.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25 ° C) Symbol Parameter Value Unit VCEO VCBO VEBO PD IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Maximum Device Dissipation Collector Current 15 30 2.5 200 40 V V V mW mA Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.88 º C/mW Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. 2N2857ELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) STATIC Symbol BVCEO BVCBO BVEBO ICBO HFE Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0...
