| Part number | 2N2857 |
|---|---|
| Datasheet | 2N2857 Datasheet PDF (Download) |
| File Size | 351.94 KB |
| Manufacturer | Motorola Semiconductor |
| Description | HIGH FREQUENCY TRANSISTOR |
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T.O /xAdc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 10 /iAdc, lc = 0) Collector Cutoff Current (Vqb = 15 Vdc, El - 0) (Vcb = 15 Vdc, l£ = 0, Ta = 150°C) ON CHARACTERISTICS DC Current Gain dC = 3.0 mAdc, Vqe = 10 Vdc) SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N2857 | NPN SILICON RF TRANSISTORS | Central Semiconductor |
 |
2N2857 | NPN TRANSISTOR | Seme LAB |
 |
2N2857 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
