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SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1
• • • • High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 30V 15V 3V 40mA 200mW 1.14mW/°C 300mW 1.