2N2857 Datasheet PDF

MECHANICAL DATA

Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) NPN TRANSISTOR 5.33 (0.210) 4.32 (0.170)

FEATURES

● SILICON NPN TRANSISTOR 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia.

APPLICATIONS

:
● AMPLIFIER, OSCILLATOR AND CONVERTER

APPLICATIONS

UP TO 500MHz 2.54 (0.100) Nom. 4 3 2 1 TO-72 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA =25°C Total Device Dissipation @ TC =25°C Operating and Storage Temperature Range 30V 15V 2.5V 40mA 200mW 300mW –65 to 200°C Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail sales@semelab.co.uk Website Prelim. 7/98 2N2857

ELECTRICAL CHARACTERISTICS

Parameter V(BR)CBO* V(BR)CEO V(BR)EBO ICBO hFE NF CEBO Gpe rbB’C’b’c fT Cre Pc Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base C...