Microsemi 2N2857
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | 2N2857 |
|---|---|
| Datasheet | 2N2857 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
●●
● Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72
DESCRIPTION
: Silicon NPN transistor, designed for UHF equipment.APPLICATIONS
include low noise amplifier; oscillator, and mixer applications.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 40 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1066.PDF 3-10-99 2N2857ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 30 2.5 Value Typ.
