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APL1001J - N-Channel Power MOSFET

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Part number APL1001J
Manufacturer Advanced Power Technology
File Size 77.24 KB
Description N-Channel Power MOSFET
Datasheet download datasheet APL1001J Datasheet

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G S D SOT-227 S D G S APL1001J 1000V 18.0A 0.60W ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter VDSS ID IDM, lLM VGS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage PD Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. APL1001J 1000 18 72 ±30 520 4.