• Part: APL1001P
  • Description: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • Manufacturer: Advanced Power Technology
  • Size: 115.01 KB
Download APL1001P Datasheet PDF
Advanced Power Technology
APL1001P
APL1001P is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Advanced Power Technology.
P-Pack 1000V 18.0A 0.60W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APL1001P UNIT Volts Amps 1000 18 72 ±30 520 4.16 -55 to 150 and Inductive Current Clamped Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS...