APL1001P datasheet by Advanced Power Technology.
| Part number | APL1001P |
|---|---|
| Datasheet | APL1001P_AdvancedPowerTechnology.pdf |
| File Size | 115.01 KB |
| Manufacturer | Advanced Power Technology |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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D P-Pack G S APL1001P 1000V 18.0A 0.60W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 N - CHANNEL ENHANCEMENT...
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