Advanced Power Technology APL1001P
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
| Part No. | APL1001P |
|---|---|
| Datasheet | APL1001P Download |
| Manufacturer |  Advanced Power Technology |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APL1001P UNIT Volts Amps 1000 18 72 ±30 520 4.16 -55 to 150 and Inductive Current Clamped Volts Watts W/°C °C 300 STATICELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 18 0.60 25 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Ohms µA Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS...
