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APL1001P - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Datasheet Details

Part number APL1001P
Manufacturer Advanced Power Technology
File Size 115.01 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet download datasheet APL1001P Datasheet

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D P-Pack G S APL1001P 1000V 18.0A 0.60W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APL1001P UNIT Volts Amps 1000 18 72 ±30 520 4.