APT1004R2BN - MOSFET

Advanced Power Technology

Datasheet Details

Part number	APT1004R2BN
Manufacturer	Advanced Power Technology
File Size	50.94 KB
Description	MOSFET
Datasheet	APT1004R2BN Datasheet
Additional preview pages of the APT1004R2BN datasheet.

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Full PDF Text Transcription

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D TO-247 G S APT1004RBN ® 1000V 4.4A 4.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1004R2BN 1000V 4.0A 4.20Ω All Ratings: TC = 25°C unless otherwise specified. APT 1004RBN APT 1004R2BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 4.4 17.6 ± 30 180 1.44 1000 4.0 16 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

Published: Apr 23, 2005 |