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APT1004RBN
®
1000V 4.4A 4.00Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1004R2BN 1000V 4.0A 4.20Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1004RBN APT 1004R2BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1000 4.4 17.6 ± 30 180 1.44
1000 4.0 16
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
APT1004RBN Datasheet
