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D G S
TO-257
APT1004RGN 1000V 3.3A 4.00Ω
TM
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT1004RGN UNIT Volts Amps
1000 3.3 13.2 ±30 100 0.8 -55 to 150 300
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
APT1004RGN Datasheet
