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D
TO-220
G S
APT1004RKN APT1004R2KN
1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter V DSS ID IDM V GS PD Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C, Derate Above 25°C
1
All Ratings: T C = 25°C unless otherwise specified. APT1004R2KN 1000 3.5 14.0 ±30 125 -55 to 150 APT1004RKN 1000 3.6 14.4
UNIT Volts Amps Amps Volts Watts °C
TJ,TSTG Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number BVDSS IDSS IGSS ID(ON) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) (VDS = 0.
APT1004RKN Datasheet
